Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science
During heat treatment, the work piece experiences a range of heating rates depending upon the sizes and types of furnace. When the Al-Si-Mg cast alloy is heated to the solutionizing temperature, recrystallization takes place during the ramp-up stage. The effect of heating rate on recrystallization in the A356 (Al-Si-Mg) alloy was studied using dilatometric and calorimetric methods. Recrystallization in as-cast Al-Si alloys is a localized event and is confined to the elasto-plastic zone surrounding the eutectic Si phase; there is no evidence of recrystallization in the center of the primary Al dendritic region. The size of the elasto-plastic zone is of the same order of magnitude as the Si particles, and recrystallized grains are observed in the elasto-plastic region near the Si particles. The coefficient of thermal expansion of Al is an order of magnitude greater than Si, and thermal stresses are generated due to the thermal mismatch between the Al phase and Si particles providing the driving force for recrystallization. In contrast, recrystallization in Al wrought alloy (7075) occurs uniformly throughout the matrix, stored energy due to cold work being the driving force for recrystallization in wrought alloys. The activation energy for recrystallization in as-cast A356 alloy is 127 KJ/mole. At a slow heating rate of 4.3 K/min, creep occurs during the heating stage of solution heat treatment. However, creep does not occur in samples heated at higher heating rates, namely, 520, 130, and 17.3 K/min.
Chaudhury, S. K.
, Warke, V.
, Shankar, S.
, Apelian, Diran
(2011). Localized Recrystallization in Cast Al-Si-Mg Alloy During Solution Heat Treatment: Dilatometric and Calorimetric Studies. Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science, 42A, 3160-3169.
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Copyright 2011, ASM International. This paper was published in Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science Vol. Iss. 10 pp. 3160-3169 and is made available as an electronic reprint with the permission of, ASM International. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplications of any material in this paper for a fee or for commercial purposes, or modification of the content of this paper are prohibited.