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The Schroedinger-Poisson Selfconsistency in Layered Quantum Semiconductor Structures

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We develop a selfconsistent solution of the Schroedinger and Poisson equations in semiconductor heterostructures with arbitrary doping profiles and layer geometries. An algorithm for this nonlinear problem is presented in a multiband k.P framework for the electronic band structure using the finite element method. The discretized functional integrals associated with the Schroedinger and Poisson equations are used in a variational approach. The finite element formulation allows us to evaluate functional derivatives needed to linearize Poisson’s equation in a natural manner. Illustrative examples are presented using a number of heterostructures including single quantum wells, an asymmetric double quantum well, p-i-n-i superlattices and trilayer superlattices.

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  • English
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  • etd-1124103-230904
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  • 2003
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  • 2003-11-24
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Permanent link to this page: https://digital.wpi.edu/show/2j62s4901