Applied Physics Letters
To realize the desired zero-dimensional behavior of a quantum dot ensemble, the ability to fabricate quantum dots with a high packing density and a high degree of size, shape, and spacing uniformity is crucial. Here we report highly ordered InAs nanodot arrays grown by molecular-beam epitaxy on nonlithographically nanopatterned GaAs. Approximately 20 billion dots are grown in a 1 cm2 area with the smallest size dispersion ever reported and forming a lateral superlattice in hexagonal dense packing form. These techniques presage a pathway to controlled growth of periodic quantum dot superstructures, which offer macroscopic spatial coherence in the interaction of quantum dots with radiation.
, Luo, Hailin
, Beresford, Rod
, Xu, Jimmy
(2004). A Growth Pathway for Highly Ordered Quantum Dot Arrays. Applied Physics Letters, 85(24), 5974-5976.
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© 2004, The American Institute of Physics. Available on publisher's site at http://apl.aip.org/.