Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science
The rate of grain growth at different high temperatures in the bulk and at the free surface of a WC-Co substrate was measured. The microstructure, phase evolution, and elemental composition at the free surface were characterized at various stages of the grain-growth process and compared to equivalent characteristics of the bulk. A dramatic difference in the rate of grain growth between the free surface and the bulk of the material was observed. Grains in the free surface grew at a much faster rate than those in the bulk. Since this fast rate of growth was found to coincide with the vaporization of the binder phase from the free surface, it is suggested that this increase in the rate of growth is related to a change in the growth mechanism from an interfacial reaction limited growth in the bulk to a surface diffusion rate limited growth at the free surface. The contact points between,grains provide bridges for atomic transport from high free-energy regions (small grains) to low free-energy regions (large grains); hence, the contiguity of the material has a strong influence on the rate of growth.
Olson, J. M.
, Makhlouf, Makhlouf M.
(2001). Characterization of the Kinetic and Mechanistic Differences Between Free-Surface and Bulk Grain Growth in WC-Co Materials. Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science, 32(6), 1261-1270.
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Copyright 2001, ASM International. This paper was published in Metallurgical and Materials Transactions A-Physical Metallurgy and Materials Science Vol. 32 Iss. 6 pp. 1261-1270 and is made available as an electronic reprint with the permission of, ASM International. One print or electronic copy may be made for personal use only. Systematic or multiple reproduction, distribution to multiple locations via electronic or other means, duplications of any material in this paper for a fee or for commercial purposes, or modification of the content of this paper are prohibited.