Brodeur, Drew R
Deskins, N Aaron
Rao, Pratap M.
Metal sulfides with moderate band gaps are desired for efficient generation of electricity or fuels from sunlight. Bi2S3, with a band gap of 1.3 eV, has been commonly synthesized by the successive ionic layer adsorption and reaction to produce nanocrystalline films. Annealing of the solution-processed Bi2S3 nanocrystals has been attempted at low temperatures, which may not improve crystallinity. Here, we report a highly crystalline and phase-pure Bi2S3 thin film photoelectrode synthesized by high-temperature annealing of the solution-processed nanocrystalline film in a sulfur vapor environment. The sulfur-annealed Bi2S3 thin film exhibits significantly enhanced light absorption and photoexcited carrier lifetime compared to the un-annealed film.
Worcester Polytechnic Institute
Major Qualifying Project
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Chemistry and Biochemistry
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