The extraordinary magnetoresistance (EMR) in metal-semiconductor hybrid structures was first demonstrated using a van der Pauw configuration for a circular semiconductor wafer with a con-centric metallic inclusion in it. This effect depends on the orbital motion of carriers in an external magnetic field, and the remarkably high magnetoresistance response observed suggests that the geometry of the metallic inclusion can be optimized to significantly enhance the EMR. Here the theory and simulations to achieve this goal are considered by comparing various 2D structures in an external magnetic field in order to evaluate the EMR in them.
Worcester Polytechnic Institute
Major Qualifying Project
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