Student Work

Semiconductor TCAD Fabrication Development for BCD Technology

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As semiconductor devices evolve, it is important to understand the fabrication processes and issues that arise with each new generation of transistor technology. Through research, and the use of the SILVACO simulation tools, we successfully simulated and tested a series of Bipolar, CMOS, and DMOS devices, and optimized them in order to minimize issues such as leakage current and punch through. Additionally, comparisons between actual, and theoretical device characteristics were made.

  • This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.
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Identifier
  • E-project-031306-170239
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Year
  • 2006
Date created
  • 2006-03-13
Resource type
Major
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Last modified
  • 2021-01-07

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