Faculty Advisor

McNeill, John A

Abstract

As semiconductor devices evolve, it is important to understand the fabrication processes and issues that arise with each new generation of transistor technology. Through research, and the use of the SILVACO simulation tools, we successfully simulated and tested a series of Bipolar, CMOS, and DMOS devices, and optimized them in order to minimize issues such as leakage current and punch through. Additionally, comparisons between actual, and theoretical device characteristics were made.

Publisher

Worcester Polytechnic Institute

Date Accepted

March 2006

Major

Electrical and Computer Engineering

Project Type

Major Qualifying Project

Accessibility

Unrestricted

Advisor Department

Electrical and Computer Engineering

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