Student Work
Semiconductor TCAD Fabrication Development for BCD Technology
PublicDownloadable Content
open in viewerAs semiconductor devices evolve, it is important to understand the fabrication processes and issues that arise with each new generation of transistor technology. Through research, and the use of the SILVACO simulation tools, we successfully simulated and tested a series of Bipolar, CMOS, and DMOS devices, and optimized them in order to minimize issues such as leakage current and punch through. Additionally, comparisons between actual, and theoretical device characteristics were made.
- This report represents the work of one or more WPI undergraduate students submitted to the faculty as evidence of completion of a degree requirement. WPI routinely publishes these reports on its website without editorial or peer review.
- Creator
- Publisher
- Identifier
- E-project-031306-170239
- Advisor
- Year
- 2006
- Date created
- 2006-03-13
- Resource type
- Major
- Rights statement
- Last modified
- 2021-01-07
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