Ram-Mohan, L. Ramdas.
Sullivan, John M.
A recent semiconductor experiment measured the magnetic dependence of the resistance of a doubly connected InAs ring structure. Oscillations in the magnetoresistance show the presence of the Aharonov-Bohm effect. Two models are presented here to verify the experimental data. The first model is analytical and approximates the system with an infinitesimally thin ring. The second model is numerical and uses the Finite Element Method to solve a 2D electron gas, single band approximation of the system. The boundary conditions of the numerical model can be solved using two different methods, modal analysis and "stealth" elements, and the equivalence of these two methods is demonstrated.
Worcester Polytechnic Institute
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