Ram-Mohan, L. Ramdas.
Extraordinary magnetoresistance (EMR) refers to the geometric magnetoresistance (MR) in a system composed of semiconductors and non-ferromagnetic metals. In this report, 2D EMR devices are explored using the Finite Element Method. The first approach is a drift velocity model of conduction which shows agreement with experimental observations. The second approach is to solve the BTE in the relaxation time approximation for the carrier distribution in phase space. A simple 1D BTE conduction example is shown to agree with analytical calculations.
Worcester Polytechnic Institute
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