Faculty Advisor

Ludwig, Reinhold.

Abstract

This project primarily focused on the characterization of Philips Semiconductors' BLF4G20LS-110 Laterally diffused metal on silicon (LDMOS) RF power transistor. After manual testing for performance parameters such as efficiency, linearity and gain, matching impedance points were verified with an automated set-up called load pull. The board design was compared with ADS simulations and the board layout was completed using AutoCAD. The end result of the project was a demonstration circuit which exceeded the current specifications for this power transistor.

Publisher

Worcester Polytechnic Institute

Date Accepted

January 2005

Major

Electrical and Computer Engineering

Major

Electrical Engineering

Project Type

Major Qualifying Project

Accessibility

Restricted-WPI community only

Advisor Department

Electrical and Computer Engineering

Advisor Program

Electrical and Computer Engineering

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