Faculty Advisor
Ludwig, Reinhold.
Abstract
This project primarily focused on the characterization of Philips Semiconductors' BLF4G20LS-110 Laterally diffused metal on silicon (LDMOS) RF power transistor. After manual testing for performance parameters such as efficiency, linearity and gain, matching impedance points were verified with an automated set-up called load pull. The board design was compared with ADS simulations and the board layout was completed using AutoCAD. The end result of the project was a demonstration circuit which exceeded the current specifications for this power transistor.
Publisher
Worcester Polytechnic Institute
Date Accepted
January 2005
Major
Electrical and Computer Engineering
Major
Electrical Engineering
Project Type
Major Qualifying Project
Copyright Statement
Access to this report is limited to members of the WPI community. Please contact a project advisor or their department to request access
Accessibility
Restricted-WPI community only
Advisor Department
Electrical and Computer Engineering
Advisor Program
Electrical and Computer Engineering